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2N7002KT1G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-3
描述:
ON SEMICONDUCTOR 2N7002KT1G. 场效应管, MOSFET, N沟道, 60V, 380mA SOT-23
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3D模型
符号图
焊盘图
引脚图
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2N7002KT1G数据手册
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2N7002K, 2V7002K
www.onsemi.com
3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
6420
0
0.4
0.8
1.2
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.6
2.4
1251007550250−25−50
0.6
1.0
1.4
1.8
2.2
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
V
GS
= 10 V
7.0 V
8.0 V
9.0 V
4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.8
1.6
2.4
3.2
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
V
GS
= 10 V
I
D
= 500 mA
I
D
= 200 mA
150
I
D
= 0.2 A
V
GS
= 4.5 V
V
GS
= 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
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