2SK1719 数据手册 - Toshiba（东芝）

●最大源漏极电压Vds Drain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.08Ω/Ohm @2.5A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.8-2.0V 耗散功率Pd Power Dissipation| 20W Description & Applications| Field Effect Transistor Silicon N Channel MOS Type High Speed,High Current DC-DC Converter Relay Drive and Motor Drive Applications\ 4-volt gate drive Low drain-source ON resistance High forward transfer Admittance Low leakage current 描述与应用| 场效应晶体管 硅N沟道MOS型 高速，高电流DC-DC转换器 继电器驱动器和电机驱动应用\ 4伏栅极驱动 低漏源导通电阻 较强的正向转移导纳 低漏电流