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AT28C010E-15JI
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AT28C010E-15JI数据手册
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1
Features
Fast Read Access Time - 120 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128 Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-byte Page Write Operation
Low Power Dissipation
40 mA Active Current
–200 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C010 is a high-performance electrically-erasable and programmable read-
only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200
µA.
1-megabit
(128K x 8)
Paged Parallel
EEPROM
AT28C010
Commercial /
Industrial
Rev. 0353E–06/99
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PDIP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC
Top View
Note: PLCC package pin 1 is
DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
DC
VCC
WE
NC
(continued)

AT28C010E-15JI 数据手册

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