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AT28C010E-15JU 数据手册 - Microchip（微芯）
制造商:
Microchip（微芯）
分类:
存储芯片
封装:
PLCC-32
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AT28C010E-15JU数据手册
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Atmel-0010I-PEEPR-AT28C010-Datasheet_062015
Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
– 300µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10
4
or 10
5
Cycles
– Data Retention: 10 Years
• Single 5V 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
Pin Configuration
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
CERDIP, FLATPACK
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PGA
Top View
44 LCC
Top View
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
6
5
4
3
2
1
44
43
42
41
40
18
19
20
21
22
23
24
25
26
27
28
A0
I/O0
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
A15
A16
NC
NC
NC
NC
VCC
WE
NC
NC
A14
32 LCC
Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
NC
(continued)
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