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CAV24C02数据手册
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CAV24C02, CAV24C04, CAV24C08, CAV24C16
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2
DEVICE MARKINGS
(SOIC−8)(TSSOP−8)
CSSS
AYMXXX
24CSSS
AYMXXX
G
G
CSSS = Specific Device Code, where
SSS = 02H for CAV24C02
SSS = 04K for CAV24C04
SSS = 08K for CAV24C08
SSS = 16K for CAV24C16
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of Assembly Lot Number
G = Pb−Free Package
24CSSS= Specific Device Code, where
SSS = 02H for CAV24C02
SSS = 04K for CAV24C04
SSS = 08K for CAV24C08
SSS = 16K for CAV24C16
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of Assembly Lot Number
G = Pb−Free Package
TOP MARKING FOR WLCSP
X = Specific Device
X = Code
4 = 24C04
8 = 24C08
6 = 24C16
YW = Production Date Code
WLCSP−4 WLCSP−5
X X
Y W Y W
Pin 1
(Ball Down)
Pin 1
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Storage Temperature −65 to +150 °C
Voltage on any pin with respect to Ground (Note 1) −0.5 to +6.5 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. During input transitions, voltage undershoot on any pin should not exceed −1 V for more than 20 ns. Voltage overshoot on pins A
0
, A
1
, A
2
and WP should not exceed V
CC
+ 1 V for more than 20 ns, while voltage on the I
2
C bus pins, SCL and SDA, should not exceed the absolute
maximum ratings, irrespective of V
CC
.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol Parameter Min Units
N
END
(Note 3) Endurance 1,000,000 Program / Erase Cycles
T
DR
Data Retention 100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V
CC
= 5 V, 25°C.

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15 页 / 0.11 MByte
ON Semiconductor(安森美)
2 页 / 0.05 MByte

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