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CMH04 数据手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
封装:
M-FLAT
描述:
200V VRRM 1.0A 0.98V VFM 20A REC
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
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应用领域在P1P5
电气规格在P1
导航目录
CMH04数据手册
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CMH04
2013-11-01
1
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH04
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: V
RRM
= 200 V
• Average forward current: I
F (AV)
= 1.0 A
• Low forward voltage: V
FM
=0.98 V (Max)@ I
FM
= 1.0 A
• Very Fast Reverse-Recovery Time: trr = 35 ns (Max)
• Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
200 V
Average forward current I
F (AV)
1.0（Note） A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
20 (50 Hz) A
Junction temperature T
j
−40 to 150 °C
Storage temperature range T
stg
−40 to 150 °C
Note 1: Ta=26°C Device mounted on a glass-epoxy board
board size: 50 mm × 50 mm
soldering land: 6 mm ×6 mm
glass-epoxy board thickness: 1.6 mm
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
V
FM (1)
I
FM
= 0.1 A (pulse test) ⎯ 0.70 ⎯
V
FM (2)
I
FM
= 0.7 A (pulse test) ⎯ 0.84 ⎯
Peak forward voltage
V
FM (3)
I
FM
= 1.0 A (pulse test) ⎯ 0.87 0.98
V
Peak repetitive reverse current I
RRM
V
RRM
= 200 V (pulse test) ⎯ ⎯ 10 μA
Reverse recovery time t
rr
I
F
= 1 A, di/dt = −30 A/μs ⎯ ⎯ 35 ns
Forward recovery time t
fr
I
F
= 1 A ⎯ ⎯ 100 ns
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 mm)
⎯ ⎯ 60
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 mm)
⎯ ⎯ 135
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 mm)
⎯ ⎯ 210
°C/W
Thermal resistance
(junction to lead)
R
th (j-ℓ)
⎯
⎯ ⎯ 16 °C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-4E1A
Weight: 0.023 g (typ.)
Start of commercial production
2002-12
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