Datasheet 搜索 > RAM芯片 > Cypress Semiconductor（赛普拉斯） > CY62256VNLL-70ZXET 数据手册 > CY62256VNLL-70ZXET 数据手册 5/17 页
器件3D模型￥ 24.443
CY62256VNLL-70ZXET 数据手册 - Cypress Semiconductor（赛普拉斯）
制造商:
Cypress Semiconductor（赛普拉斯）
分类:
RAM芯片
封装:
TSOP-28
描述:
CY62256VN 系列 256 Kb (32 K x 8) 3 V 70 ns 静态RAM - TSOP-28
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
CY62256VNLL-70ZXET数据手册
Page:
of 17 Go
若手册格式错乱，请下载阅览PDF原文件
CY62256VN
Document Number: 001-06512 Rev. *H Page 5 of 17
Capacitance
Parameter
[5]
Description Test Conditions Max Unit
C
IN
Input capacitance T
A
= 25 °C, f = 1 MHz, V
CC
= 3.0 V 6 pF
C
OUT
Output capacitance 8pF
Thermal Resistance
Parameter
[5]
Description Test Conditions SOIC TSOPI RTSOPI Unit
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a
3 × 4.5 inch, two-layer
printed circuit board
68.45 87.62 87.62 C/W
JC
Thermal resistance
(junction to case)
26.94 23.73 23.73 C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
V
CC
V
CC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
5ns
5
ns
OUTPUT V
th
Equivalent to: THÉ VENINEQUIVALENT
ALL INPUT PULSES
R1
R
th
Parameter Value Units
R1 1100 Ohms
R2 1500 Ohms
RTH 645 Ohms
VTH 1.750 Volts
Note
5. Tested initially and after any design or process changes that may affect these parameters.
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
