Datasheet 搜索 > RAM芯片 > Cypress Semiconductor（赛普拉斯） > CY62256VNLL-70ZXET 数据手册 > CY62256VNLL-70ZXET 数据手册 6/17 页
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CY62256VNLL-70ZXET 数据手册 - Cypress Semiconductor（赛普拉斯）
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Cypress Semiconductor（赛普拉斯）
分类:
RAM芯片
封装:
TSOP-28
描述:
CY62256VN 系列 256 Kb (32 K x 8) 3 V 70 ns 静态RAM - TSOP-28
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CY62256VNLL-70ZXET数据手册
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CY62256VN
Document Number: 001-06512 Rev. *H Page 6 of 17
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions
[6]
Min Typ
[7]
Max Unit
V
DR
V
CC
for data retention 1.4 – – V
I
CCDR
Data retention current V
CC
= 1.4 V,
CE
V
CC
– 0.3 V,
V
IN
V
CC
– 0.3 V
or V
IN
0.3 V
Commercial – 0.1 3 A
Industrial/
Automotive-A
–6
Automotive-E – 50
t
CDR
[6]
Chip deselect to data retention
time
0––ns
t
R
[8]
Operation recovery time 70 – – ns
Data Retention Waveform
Figure 3. Data Retention Waveform
1.8 V1.8 V
t
CDR
V
DR
1.4 V
DATA RETENTION MODE
t
R
CE
V
CC
Notes
6. No input may exceed V
CC
+ 0.3 V.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
Typ, T
A
= 25 °C, and t
AA
= 70 ns.
8. Tested initially and after any design or process changes that may affect these parameters.
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