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FCH041N65EF_F155 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
中高压MOS管
封装:
TO-247-3
描述:
FAIRCHILD SEMICONDUCTOR FCH041N65EF_F155 功率场效应管, MOSFET, N沟道, 76 A, 650 V, 0.036 ohm, 10 V, 5 V 新
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FCH041N65EF_F155数据手册
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©2016 Fairchild Semiconductor Corporation
FCH041N65EF Rev. 1.0
www.fairchildsemi.com1
March 2016
FCH041N65EF — N-Channel SuperFET
®
II FRFET
®
MOSFET
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FCH041N65EF_F155 Unit
V
DSS
Drain to Source Voltage 650 V
V
GSS
Gate to Source Voltage
- DC ±20
V
- AC (f > 1 Hz) ±30
I
D
Drain Current
- C
ontinuous (T
C
= 25
o
C) 76
A
- C
ontinuous (T
C
= 100
o
C) 48.1
I
DM
Drain Current - Pulsed (Note 1) 228 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 2025 mJ
I
AR
Avalanche Current (Note 1) 15 A
E
AR
Repetitive Avalanche Energy (Note 1) 5.95 mJ
dv/dt
MOSFET dv/d
t
100
V/ns
Peak Diode Recovery dv/dt (Note 3) 50
P
D
Power Dissipation
(T
C
= 25
o
C) 595 W
- Derate Above 25
o
C4.76W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FCH041N65EF_F155
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.21
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 40
FCH041N65EF
N-Channel SuperFET
®
II FRFET
®
MOSFET
650 V, 76 A, 41 mΩ
Features
•700 V @ T
J
= 150°C
•Typ. R
DS(on)
= 36 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 229 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 631 pF)
• 100% Avalanche Tested
•RoHS Compliant
Applications
Description
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET
®
MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter • AC - DC Power Supply
G
S
D
G
D
S
TO-247
long leads
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