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FCH041N65F_F155 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
TO-247
描述:
ON Semiconductor SuperFET II 系列 Si N沟道 MOSFET FCH041N65F_F155, 76 A, Vds=650 V, 3引脚 TO-247封装
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FCH041N65F_F155数据手册
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©2013 Fairchild Semiconductor Corporation
FCH041N60F Rev. C4
www.fairchildsemi.com
4
FCH041N60F — N-Channel SuperFET
®
II FRFET
®
MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage
-100 -50 0 50 100 150 200
0.85
0.90
0.95
1.00
1.05
1.10
1.15
*Notes:
1. V
GS
= 0V
2. I
D
= 10mA
BV
DSS
, [Normalized]
Drain to Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 38A
R
DS(on)
, [Normalized]
Drain to Source On-Resistance
T
J
, Junction Temperature [
o
C]
0.1 1 10 100 1000
0.1
1
10
100
500
10μs
100μs
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
V
DS
, Drain to Source Voltage [V]
25 50 75 100 125 150
0
20
40
60
80
V
GS
= 10V
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
0 100 200 300 400 500 600
0
9
18
27
36
45
E
OSS
, [μJ]
V
DS
, Drain to Source Voltage [V]
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