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FCP20N60FS 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
FCP20N60FS数据手册
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3 www.fairchildsemi.com
FCP20N60 / FCPF20N60 Rev. A2
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
°
C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
0
10
1
10
2
Note
1. V
DS
= 40V
2. 250
µ
s Pulse Test
-55
°
C
150
°
C
25
°
C
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0.0
0.1
0.2
0.3
0.4
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
°
C
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.20.40.60.81.01.21.41.6
10
0
10
1
10
2
25
°
C
150
°
C
Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 1020304050607080
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 20A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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