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FCP20N60FS 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-220-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
FCP20N60FS数据手册
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4 www.fairchildsemi.com
FCP20N60 / FCPF20N60 Rev. A2
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FCP20N60 for FCPF20N60
Figure 10. Maximum Drain Current
vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
°
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 20 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
°
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 us
DC
100 ms
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0
5
10
15
20
25
I
D
, Drain Current [A]
T
C
, Case Temperature [
°
C]
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