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IPP90R800C3XKSA2 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-220
描述:
晶体管, MOSFET, N沟道, 6.9 A, 900 V, 0.62 ohm, 10 V, 3 V
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IPP90R800C3XKSA2数据手册
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IPP90R800C3
Maximum ratings, at T
J
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current
I
S
A
Diode pulse current
2)
I
S,pulse
15
Reverse diode dv /dt
4)
dv /dt 4 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1.2 K/W
R
thJA
leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at T
J
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
900 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=0.46 mA
2.5 3 3.5
Zero gate voltage drain current
I
DSS
V
DS
=900 V, V
GS
=0 V,
T
j
=25 °C
--1µA
V
DS
=900 V, V
GS
=0 V,
T
j
=150 °C
-10-
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=4.1 A,
T
j
=25 °C
- 0.62 0.8
Ω
V
GS
=10 V, I
D
=4.1 A,
T
j
=150 °C
- 1.7 -
Gate resistance
R
G
f =1 MHz, open drain - 1.3 -
Ω
Value
T
C
=25 °C
4.1
Values
Thermal resistance, junction -
ambient
Rev. 1.0 page 2 2008-07-30
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