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IRFR3710Z
3.92
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  • 封装尺寸在P9P10
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IRFR3710Z数据手册
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IRFR3710Z
IRFU3710Z
HEXFET
®
Power MOSFET
V
DSS
= 100V
R
DS(on)
= 18m
I
D
= 42A
11/13/06
www.irf.com 1
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Features
D-Pak
IRFR3710Z
I-Pak
IRFU3710Z
HEXFET
®
is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
u
l
se
d D
ra
i
n
C
urrent
c
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
d
mJ
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
este
d V
a
l
ue
h
I
AR
A
va
l
anc
h
e
C
urrent
c
A
E
AR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
ner
gy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 1.05
R
θ
JA
J
unct
i
on-to-
A
m
bi
ent
(PCB
mount
)
i
––– 40 °C/W
R
θ
JA
Junction-to-Ambient ––– 110
200
150
See Fig.12a, 12b, 15, 16
140
0.95
± 20
Max.
56
39
220
42
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
PD - 94740A

IRFR3710Z 数据手册

International Rectifier(国际整流器)
12 页 / 0.71 MByte

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