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IRFR3710Z 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
DPAK-252
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IRFR3710Z数据手册
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IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
V
DSS
100V
R
DS(on)
18m
I
D
42A
1 2016-5-31
Absolute Maximum Ratings
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 56
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 39
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 42
I
DM
Pulsed Drain Current 220
P
D
@T
C
= 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS (Thermally limited)
Single Pulse Avalanche Energy 150
mJ
E
AS (Tested )
Single Pulse Avalanche Energy Tested Value 200
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
A
D- Pak
IRFR3710ZPbF
G D S
Gate Drain Source
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to T
jmax
Multiple Package Options
Lead-Free
G
I- Pak
IRFU3710ZPbF
HEXFET
®
Power MOSFET
Base part number Package Type
Standard Pack
Form Quantity
IRFU3710ZPbF
I-Pak
Tube 75 IRFU3710ZPbF
IRFR3710ZPbF D-Pak
Tube 75 IRFR3710ZPbF
Tape and Reel Left 3000 IRFR3710ZTRLPbF
Orderable Part Number
S
G
D
D
S
D
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.05
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
I-Pak Lead form 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
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