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IRLML9301TRPBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOT-23-3
描述:
INTERNATIONAL RECTIFIER IRLML9301TRPBF 场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
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IRLML9301TRPBF数据手册
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NTR4502P, NVTR4502P
http://onsemi.com
2
Electrical Characteristics (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−30 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= −30 V
T
J
= 25°C −1 mA
T
J
= 55°C −10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.0 −3.0 V
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V, I
D
= −1.95 A 155 200
mW
V
GS
= −4.5 V, I
D
= −1.5 A 240 350
Forward Transconductance g
FS
V
DS
= −10 V, I
D
=−1.25 A 3 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= −15 V
200
pF
Output Capacitance C
OSS
80
Reverse Transfer Capacitance C
RSS
50
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DS
= −15 V; I
D
= −1.95 A
6 10
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate−to−Source Charge Q
GS
1
Gate−to−Drain Charge Q
GD
1.7
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
=−10 V, V
DD
= −15 V,
I
D
= −1.95 A, R
G
= 6 W
5.2 10
ns
Rise Time t
r
12 20
Turn−Off Delay Time t
d(OFF)
19 35
Fall Time t
f
17.5 30
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −1.25 A −0.8 −1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/d
t
= 100 A/ms, I
S
= −1.25 A
23 ns
2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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