Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRLML9301TRPBF 数据手册 > IRLML9301TRPBF 数据手册 3/5 页
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IRLML9301TRPBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
SOT-23-3
描述:
INTERNATIONAL RECTIFIER IRLML9301TRPBF 场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
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IRLML9301TRPBF数据手册
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of 5 Go
若手册格式错乱，请下载阅览PDF原文件
NTR4502P, NVTR4502P
http://onsemi.com
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Figure 1. On−Region Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
V
GS
= −2.8 V
V
GS
= −2.6 V
V
GS
= −2.4 V
V
GS
= −3.0 V
V
GS
= −3.2 V
V
GS
= −3.4 V
V
GS
= −3.6 V
V
GS
= −3.8 V
T
J
= 25°C
V
GS
= −5.0 V
V
GS
= −7.0 V
V
GS
= −10 V
0
1
2
3
4
5
1234567
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
V
DS
= −10 V
V
GS
= −4.0 V
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
0.1
0.15
0.2
0.25
0.3
0.35
0.4
345678910
I
D
= −1.95 A
T
J
= 25°C
Figure 3. On−Resistance versus
Gate−to−Source Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.1
0.15
0.2
0.25
0.3
1 1.5 2 2.5 3 3.5 4 4.5 5
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −10 V
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.8
1
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
I
D
= −1.9 A
V
GS
= −10 V
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1
10
100
1000
2 6 10 14 18 22 26 30
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
V
GS
= 0 V
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