Datasheet 搜索 > MOS管 > International Rectifier（国际整流器） > IRLZ44NPBF 数据手册 > IRLZ44NPBF 数据手册 2/9 页
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IRLZ44NPBF 数据手册 - International Rectifier（国际整流器）
制造商:
International Rectifier（国际整流器）
分类:
MOS管
封装:
TO-220-3
描述:
INTERNATIONAL RECTIFIER IRLZ44NPBF 场效应管, N 通道, MOSFET, 55V, 47A TO-220AB 新
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IRLZ44NPBF数据手册
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IRLZ44NPbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.070 V/°C Reference to 25°C, I
D
= 1mA
0.022 V
GS
= 10V, I
D
= 25A
0.025 Ω V
GS
= 5.0V, I
D
= 25A
0.035 V
GS
= 4.0V, I
D
= 21A
V
GS(th)
Gate Threshold Voltage 1.0 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 21 S V
DS
= 25V, I
D
= 25A
25 V
DS
= 55V, V
GS
= 0V
250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100 V
GS
= 16V
Gate-to-Source Reverse Leakage -100 V
GS
= -16V
Q
g
Total Gate Charge 48 I
D
= 25A
Q
gs
Gate-to-Source Charge 8.6 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge 25 V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 11 V
DD
= 28V
t
r
Rise Time 84 I
D
= 25A
t
d(off)
Turn-Off Delay Time 26 R
G
= 3.4Ω, V
GS
= 5.0V
t
f
Fall Time 15 R
D
= 1.1Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 1700 V
GS
= 0V
C
oss
Output Capacitance 400 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance 7.5
L
D
Internal Drain Inductance 4.5
µA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25°C, I
S
= 25A, V
GS
= 0V
t
rr
Reverse Recovery Time 80 120 ns T
J
= 25°C, I
F
= 25A
Q
rr
Reverse RecoveryCharge 210 320 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
160
47
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 25A, di/dt ≤ 270A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
V
DD
= 25V, starting T
J
= 25°C, L = 470µH
R
G
= 25Ω, I
AS
= 25A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
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