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Datasheet 搜索 > MOS管 > Infineon(英飞凌) > IRLZ44NPBF 数据手册 > IRLZ44NPBF 数据手册 1/9 页
IRLZ44NPBF
¥ 2.55
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  • 封装尺寸在P8
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IRLZ44NPBF数据手册
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HEXFET
®
Power MOSFET
IRLZ44NPbF
PD - 94831
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
V
DSS
= 55V
R
DS(on)
= 0.022
I
D
= 47A
S
D
G
T
O
-22
0
AB
11/11/03
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case   1.4
R
θCS
Case-to-Sink, Flat, Greased Surface  0.50  °C/W
R
θJA
Junction-to-Ambient   62
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 47
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 33 A
I
DM
Pulsed Drain Current 160
P
D
@T
C
= 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 210 mJ
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Absolute Maximum Ratings

IRLZ44NPBF 数据手册

Infineon(英飞凌)
9 页 / 0.21 MByte
Infineon(英飞凌)
270 页 / 11.59 MByte
Infineon(英飞凌)
30 页 / 0.64 MByte
Infineon(英飞凌)
2 页 / 0.17 MByte
Infineon(英飞凌)
37 页 / 2.01 MByte
Infineon(英飞凌)
1 页 / 0.14 MByte

IRLZ44 数据手册

International Rectifier(国际整流器)
Vishay Siliconix
Samsung(三星)
Vishay Intertechnology
Vishay Semiconductor(威世)
功率MOSFET Power MOSFET
Fairchild(飞兆/仙童)
Infineon(英飞凌)
TI(德州仪器)
Infineon(英飞凌)
INFINEON  IRLZ44NPBF  晶体管, MOSFET, N沟道, 41 A, 55 V, 22 mohm, 10 V, 2 V
Infineon(英飞凌)
HEXFET® N 通道功率 MOSFET 最大 50A,InfineonHEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管,Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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