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IRLZ44NPBF 数据手册 - Infineon(英飞凌)
制造商:
Infineon(英飞凌)
分类:
MOS管
封装:
TO-220-3
描述:
INFINEON IRLZ44NPBF 晶体管, MOSFET, N沟道, 41 A, 55 V, 22 mohm, 10 V, 2 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P8
标记信息在P8
技术参数、封装参数在P1
电气规格在P2
导航目录
IRLZ44NPBF数据手册
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HEXFET
®
Power MOSFET
IRLZ44NPbF
PD - 94831
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
V
DSS
= 55V
R
DS(on)
= 0.022Ω
I
D
= 47A
S
D
G
T
O
-22
0
AB
11/11/03
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case 1.4
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 °C/W
R
θJA
Junction-to-Ambient 62
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 47
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 33 A
I
DM
Pulsed Drain Current 160
P
D
@T
C
= 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 210 mJ
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Absolute Maximum Ratings
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