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IXTY08N100D2 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
MOS管
封装:
TO-252-3
Pictures:
3D模型
符号图
焊盘图
引脚图
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技术参数、封装参数在P2
应用领域在P1
导航目录
IXTY08N100D2数据手册
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© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSX
T
J
= 25°C to 150°C 1000 V
V
GSX
Continuous ±20 V
V
GSM
Transient ±30 V
P
D
T
C
= 25°C60W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
DS100182A(12/09)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSX
V
GS
= - 5V, I
D
= 25μA 1000 V
V
GS(off)
V
DS
= 25V, I
D
= 25μA - 2.0 - 4.0 V
I
GSX
V
GS
= ±20V, V
DS
= 0V ±50 nA
I
DSX(off)
V
DS
= V
DSX
, V
GS
= - 5V 1 μA
T
J
= 125°C 15 μA
R
DS(on)
V
GS
= 0V, I
D
= 400mA, Note 1 21 Ω
I
D(on)
V
GS
= 0V, V
DS
= 50V, Note 1 800 mA
Depletion Mode
MOSFET
N-Channel
IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
V
DSX
= 1000V
I
D(on)
> 800mA
R
DS(on)
≤≤
≤≤
≤ 21
ΩΩ
ΩΩ
Ω
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXTY)
TO-263 AA (IXTA)
G
D
S
TO-220AB (IXTP)
D (Tab)
G
S
D (Tab)
G
S
D (Tab)
Preliminary Technical Information
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