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IXTY08N100D2 数据手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
MOS管
封装:
TO-252-3
Pictures:
3D模型
符号图
焊盘图
引脚图
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页面导航:
技术参数、封装参数在P2
应用领域在P1
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IXTY08N100D2数据手册
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IXTY08N100D2 IXTA08N100D2
IXTP08N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 30V, I
D
= 400mA, Note 1 330 560 mS
C
iss
325 pF
C
oss
V
GS
= -10V, V
DS
= 25V, f = 1MHz 24 pF
C
rss
6.5 pF
t
d(on)
28 ns
t
r
57 ns
t
d(off)
34 ns
t
f
48 ns
Q
g(on)
14.6 nC
Q
gs
V
GS
= 5V, V
DS
= 500V, I
D
= 400mA 1.2 nC
Q
gd
8.3 nC
R
thJC
2.08 °C/W
R
thCS
TO-220 0.50 °C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA V
DS
= 800V, I
D
= 45mA, T
C
= 75°C, Tp = 5s 36 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
SD
I
F
= 800mA, V
GS
= -10V, Note 1 0.8 1.3 V
t
rr
1.03 μs
I
RM
7.40 A
Q
RM
3.80 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
V
GS
= ±5V, V
DS
= 500V, I
D
= 400mA
R
G
= 10Ω (External)
I
F
= 800mA, -di/dt = 100A/μs
V
R
= 100V, V
GS
= -10V
TO-263 (IXTA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
TO-252 AA (IXTY) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
1. Gate
2. Drain
3. Source
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
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