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LP5907UVE-1.8/NOPB数据手册
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EN
IN OUT
GND
1 PF 1 PF
INPUT
ENABLE
GND
OUTPUT
LP5907
Copyright © 2016, Texas Instruments Incorporated
13
LP5907
www.ti.com
SNVS798J APRIL 2012REVISED MARCH 2016
Product Folder Links: LP5907
Submit Documentation FeedbackCopyright © 2012–2016, Texas Instruments Incorporated
8 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LP5907 is designed to meet the requirements of RF and analog circuits, by providing low noise, high PSRR,
low quiescent current, and low line or load transient response figures. The device offers excellent noise
performance without the need for a noise bypass capacitor and is stable with input and output capacitors with a
value of 1 µF. The LP5907 delivers this performance in industry standard packages such as DSBGA, X2SON,
and SOT-23 which, for this device, are specified with an operating junction temperature (T
J
) of –40°C to 125°C.
8.2 Typical Application
Figure 21 shows the typical application circuit for the LP5907. Input and output capacitances may need to be
increased above the 1 µF minimum for some applications.
Figure 21. LP5907 Typical Application
8.2.1 Design Requirements
DESIGN PARAMETER EXAMPLE VALUE
Input voltage range 2.2 V to 5.5 V
Output voltage 1.8 V
Output current 200 mA
Output capacitor range 0.7 µF to 10 µF
Input/Output capacitor ESR range 5 to 500 mΩ
8.2.2 Detailed Design Procedure
8.2.2.1 Power Dissipation and Device Operation
The permissible power dissipation for any package is a measure of the capability of the device to pass heat from
the power source, the junctions of the IC, to the ultimate heat sink, the ambient environment. Thus, the power
dissipation is dependent on the ambient temperature and the thermal resistance across the various interfaces
between the die junction and ambient air.

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