Datasheet 搜索 > 负载控制器 > Linear Technology（凌力尔特） > LT1160IS#TRPBF 数据手册 > LT1160IS#TRPBF 数据手册 8/16 页
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LT1160IS#TRPBF 数据手册 - Linear Technology（凌力尔特）
制造商:
Linear Technology（凌力尔特）
分类:
负载控制器
封装:
SOIC-14
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LT1160IS#TRPBF数据手册
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8
LT1160/LT1162
11602fb
TI I G DIAGRA
UWW
OPERATIO
U
(Refer to Functional Diagram)
The LT1160 (or 1/2 LT1162) incorporates two indepen-
dent driver channels with separate inputs and outputs. The
inputs are TTL/CMOS compatible; they can withstand
input voltages as high as V
+
. The 1.4V input threshold is
regulated and has 300mV of hysteresis. Both channels are
noninverting drivers. The internal logic prevents both
outputs from simultaneously turning on under any input
conditions. When both inputs are high both outputs are
actively held low.
The floating supply for the top driver is provided by a
bootstrap capacitor between the Boost pin and the Top
Source pin. This capacitor is recharged each time the
negative plate goes low in PWM operation.
The undervoltage detection circuit disables both channels
when V
+
is below the undervoltage trip point. A separate
UV detect block disables the high side channel when
V
BOOST
– V
TSOURCE
is below its own undervoltage trip
point.
The top and bottom gate drivers in the LT1160 each utilize
two gate connections: 1) a gate drive pin, which provides
the turn on and turn off currents through an optional series
gate resistor, and 2) a gate feedback pin which connects
directly to the gate to monitor the gate-to-source voltage.
Whenever there is an input transition to command the
outputs to change states, the LT1160 follows a logical
sequence to turn off one MOSFET and turn on the other.
First, turn-off is initiated, then V
GS
is monitored until it has
decreased below the turn-off threshold, and finally the
other gate is turned on.
10V
2V
IN TOP
IN BOTTOM
TOP GATE
DRIVER
BOTTOM
GATE
DRIVER
2V
0.8V
2V
0.8V
12V
0V
12V
0V
t
r
t
D1
t
D3
10V
2V
t
r
t
D2
t
D4
t
f
t
D3
t
D2
t
f
t
D4
1160/62 TD
t
D1
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