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M25P40-VMN3PB
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M25P40-VMN3PB数据手册
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M25P40 3V 4Mb Serial Flash Embedded
Memory
Features
SPI bus-compatible serial interface
4Mb Flash memory
75 MHz clock frequency (maximum)
2.3V to 3.6V single supply voltage
Page program (up to 256 bytes) in 0.8ms (TYP)
Erase capability
Sector erase: 512Kb in 0.6 s (TYP)
Bulk erase: 4Mb in 4.5 s (TYP)
Write protection
Hardware write protection: protected area size
defined by nonvolatile bits BP0, BP1, BP2
Deep power-down: 1µA (TYP)
Electronic signature
JEDEC-standard 2-byte signature (2013h)
Unique ID code (UID) with 16-byte read-only
space, available upon request
RES command, one-byte signature (12h) for
backward compatibility
More than 100,000 write cycles per sector
Automotive-grade parts available
Packages (RoHS-compliant)
SO8N (MN) 150 mils
SO8W (MW) 208 mils
VFDFPN8 (MP) MLP8 6mm x 5mm
UFDFPN8 (MC) MLP8 4mm x 3mm
UFDFPN8 (MB) MLP8 2mm x 3mm
M25P40 Serial Flash Embedded Memory
Features
PDF: 09005aef8456654f
m25p40.pdf - Rev. G 05/13 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

M25P40-VMN3PB 数据手册

Micron(镁光)
61 页 / 1.14 MByte
Micron(镁光)
54 页 / 0.69 MByte

M25P40VMN3 数据手册

ST Microelectronics(意法半导体)
4兆位,低电压,串行闪存的40MHz SPI总线接口 4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface
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512 Kb到32兆位,低电压,串行闪存采用40 MHz或50 MHz的SPI总线接口 512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
Micron(镁光)
ST Microelectronics(意法半导体)
Micron(镁光)
Micron(镁光)
Micron(镁光)
ST Microelectronics(意法半导体)
4兆位,低电压,串行闪存的40MHz SPI总线接口 4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface
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