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MJD243T4G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-252-3
描述:
ON SEMICONDUCTOR MJD243T4G Bipolar (BJT) Single Transistor, NPN, 100 V, 40 MHz, 12.5 W, 4 A, 15 hFE 新
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MJD243T4G数据手册
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MJD243 (NPN), MJD253 (PNP)
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
R
q
JC
R
q
JA
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
10
89.3
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
°C/W
2. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
V
CEO(sus)
100 −
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
J
= 125°C)
I
CBO
−
−
100
100
nAdc
mAdc
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
I
EBO
− 100
nAdc
DC Current Gain (Note 3)
(I
C
= 200 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
h
FE
40
15
180
−
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
−
−
0.3
0.6
Vdc
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
V
BE(sat)
− 1.8
Vdc
Base−Emitter On Voltage (Note 3)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
f
T
40 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
C
ob
− 50
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. f
T
= ⎪h
FE
⎪• f
test
.
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