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MMBT2907ALT1 数据手册 - DB Lectro
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MMBT2907ALT1数据手册
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MMBT2907AL, SMMBT2907AL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= −1.0 mAdc, I
B
= 0)
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−60
−60
−
−
Vdc
Collector−Base Breakdown Voltage (I
C
= −10 Adc, I
E
= 0)
V
(BR)CBO
−60 − Vdc
Emitter−Base Breakdown Voltage (I
E
= −10 Adc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current (V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc) I
CEX
− −50 nAdc
Collector Cutoff Current
(V
CB
= −50 Vdc, I
E
= 0)
(V
CB
= −50 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
−
−
−0.010
−10
Adc
Base Cutoff Current (V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc) I
BL
− −50 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc)
(I
C
= −500 mAdc, V
CE
= −10 Vdc) (Note 5)
h
FE
75
100
100
100
50
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= −150 mAdc, I
B
= −15 mAdc) (Note 5)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
−
−
−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage (Note 5)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
−
−
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Notes 5, 6),
(I
C
= −50 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
200 − MHz
Output Capacitance (V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
− 8.0
pF
Input Capacitance (V
EB
= −2.0 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
− 30
SWITCHING CHARACTERISTICS
Turn−On Time
(V
CC
= −30 Vdc, I
C
= −150 mAdc,
I
B1
= −15 mAdc)
t
on
− 45
ns
Delay Time t
d
− 10
Rise Time t
r
− 40
Turn−Off Time
(V
CC
= −6.0 Vdc, I
C
= −150 mAd
c,
I
B1
= I
B2
= −15 mAdc)
(V
CC
= −6.0 Vdc, I
C
= −150 mAd
c,
I
B1
= I
B2
= −15 mAdc)
t
off
− 100
Storage Time t
s
− 80
Fall Time t
f
− 30
5. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
6. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
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