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MMBT2907ALT1
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MMBT2907ALT1数据手册
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of 6 Go
若手册格式错乱,请下载阅览PDF原文件
MMBT2907AL, SMMBT2907AL
www.onsemi.com
4
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
R
s
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= -50 A
-100 A
-500 A
-1.0 mA
R
s
= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
I
C
= -1.0 mA, R
s
= 430
-500 A, R
s
= 560
-50 A, R
s
= 2.7 k
-100 A, R
s
= 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
f
T
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
20
10
7.0
5.0
3.0
-0.2
-0.3
-0.5
-1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
C
eb
C
cb
V
CE
= -20 V
T
J
= 25°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.6
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C

MMBT2907ALT1 数据手册

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