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MTD5P06E 数据手册 - Motorola（摩托罗拉）
制造商:
Motorola（摩托罗拉）
封装:
CASE 369A-13
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3D模型
符号图
焊盘图
引脚图
产品图
MTD5P06E数据手册
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MTD5P06E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 2 4 6 7
0
4
8
10
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
2 4 6 8 9
0
6
10
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 4 8 10
0.20
0.36
0.52
0.60
0 4 8 12 14
0.30
0.34
0.42
0.46
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.7
1.1
1.5
0 20 6050 70
1
10
100
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
– 25 0 25 50 75 100 125 150
T
J
= 25
°
C
V
DS
≥
10 V
100
°
C
25
°
C
T
J
= –55
°
C
T
J
= 100
°
C
25
°
C
–55
°
C
T
J
= 25
°
C
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 2.5 A
9 V
8 V
7 V
6 V
5 V
15 V
2
6
0.28
0.44
0.9
1.3
2
4
8
0.38
1 3 5 3 5 7
2 6 2 6 10
403010
100
°
C
T
J
= 125
°
C
25
°
C
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