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NE5517NG 数据手册 - ON Semiconductor(安森美)
制造商:
ON Semiconductor(安森美)
分类:
放大器、缓冲器
封装:
DIP-16
描述:
双通道互导放大器
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P1P2Hot
典型应用电路图在P7
原理图在P2
封装尺寸在P14P15
焊盘布局在P14
型号编码规则在P1P13P15
标记信息在P1P15
封装信息在P13
技术参数、封装参数在P13
应用领域在P1P7P8
电气规格在P4P5P6
导航目录
NE5517NG数据手册
Page:
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若手册格式错乱,请下载阅览PDF原文件

NE5517, NE5517A, AU5517
http://onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
V
OUT
V
CMR
V
OUT
μ
10
10
10
10
1
PEAK OUTPUT CURRENT ( A)
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
+125°C
4
3
2
+25°C
-55°C
10
10
10
10
10
4
3
2
5
-50°C -25°C0°C25°C50°C75°C100°C125°C
0V
(+)V
IN
= (−)V
IN
= V
OUT
= 36V
LEAKAGE CURRENT (pA)
AMBIENT TEMPERATURE (T
A
)
μ
10
10
10
10
10
TRANSCONDUCTANCE (gM) — ( ohm)
4
3
2
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
+125°C
+25°C
-55°C
5
gM
mq
m
M
PINS 2, 15
OPEN
10
10
1
0.1
0.01
INPUT RESISTANCE (MEG )
1
2
0.1mA1mA10mA 100m A 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
PINS 2, 15
OPEN
10
10
10
10
1
INPUT LEAKAGE CURRENT (pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125°C
+25°C
012345 67
5
INPUT OFFSET VOLTAGE (mV)
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 3. Input Offset Voltage
V
S
= ±15V
+125°C
+25°C
-55°C
+125°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK OUTPUT VOLTAGE AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
T
amb
= 25°C
V
CMR
RLOAD = ∞
COMMON-MODE RANGE (V)
10
10
10
1
0.1
INPUT OFFSET CURRENT (nA)
2
3
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 4. Input Bias Current
V
S
= ±15V
+125°C
+25°C
-55°C
10
10
10
10
1
INPUT BIAS CURRENT (nA)
3
4
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 5. Input Bias Current
V
S
= ±15V
+125°C
+25°C
-55°C
2
Figure 6. Peak Output Current
Figure 7. Peak Output Voltage and
Common-Mode Range
Figure 8. Leakage Current
Figure 9. Input Leakage Figure 10. Transconductance
Figure 11. Input Resistance
Ω
V
S
= ±15V
V
S
= ±15V
V
S
= ±15V
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