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NTGS3455T1 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-6
描述:
-4.5A,-12V功率MOSFET
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NTGS3455T1数据手册
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© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1 Publication Order Number:
NTGS3433T1/D
NTGS3433T1
MOSFET
−3.3 Amps, −12 Volts
P−Channel TSOP−6
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−12 Volts
Gate−to−Source Voltage − Continuous V
GS
"8.0 Volts
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
Maximum Operating Power Dissipation
Maximum Operating Drain Current
R
q
JA
P
d
I
D
I
DM
P
d
I
D
62.5
2.0
−3.3
−20
1.0
−2.35
°C/W
Watts
Amps
Amps
Watts
Amps
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 mS)
Maximum Operating Power Dissipation
Maximum Operating Drain Current
R
q
JA
P
d
I
D
I
DM
P
d
I
D
128
1.0
−2.35
−14
0.5
−1.65
°C/W
Watts
Amps
Amps
Watts
Amps
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu 0.06″ thick single
sided), t t 5.0 seconds.
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu 0.06″ thick single
sided), operating to steady state.
3
4
1256
P−Channel
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
GATE
DRAIN
SOURCE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
NTGS3433T1
TSOP−6 3000 Tape & Reel
TSOP−6
(Pb−Free)
3000 Tape & Reel
V
(BR)DSS
R
DS(on)
TYP I
D
Max
−12 V
75 mW @ −4.5 V
−3.3 A
1
433 M G
G
433 = Specific Device Code
M
= Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTGS3433T1G
http://onsemi.com
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