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NTGS3455T1 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-6
描述:
-4.5A,-12V功率MOSFET
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NTGS3455T1数据手册
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NTGS3433T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Notes 3 & 4)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −10 mA)
V
(BR)DSS
−12 − −
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −8 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −8 Vdc, T
J
= 70°C)
I
DSS
−
−
−
−
−1.0
−5.0
mAdc
Gate−Body Leakage Current
(V
GS
= −8.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− − −100
nAdc
Gate−Body Leakage Current
(V
GS
= +8.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mAdc)
V
GS(th)
−0.50 −0.70 −1.50
Vdc
Static Drain−Source On−State Resistance
(V
GS
= −4.5 Vdc, I
D
= −3.3 Adc)
(V
GS
= −2.5 Vdc, I
D
= −2.9 Adc)
R
DS(on)
−
−
0.055
0.075
0.075
0.095
W
Forward Transconductance
(V
DS
= −10 Vdc, I
D
= −3.3 Adc)
g
FS
− 7.0 −
mhos
DYNAMIC CHARACTERISTICS
Total Gate Charge
(V
DS
= −10 Vdc, V
GS
= −4.5 Vdc,
I
D
= −3.3 Adc)
Q
tot
− 7.0 15
nC
Gate−Source Charge Q
gs
− 2.0 −
Gate−Drain Charge Q
gd
− 3.5 −
Input Capacitance
(V
DS
= −5.0 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 550 −
pF
Output Capacitance C
oss
− 450 −
Reverse Transfer Capacitance C
rss
− 200 −
SWITCHING CHARACTERISTICS
Turn−On Delay Time
(V
DD
= −10 Vdc, I
D
= −1.0 Adc,
V
GS
= −4.5 Vdc, R
g
= 6.0 W)
t
d(on)
− 20 30
ns
Rise Time t
r
− 20 30
Turn−Off Delay Time t
d(off)
− 110 120
Fall Time t
f
− 100 115
Reverse Recovery Time
(I
S
= −1.7 Adc, dl
S
/dt = 100 A/ms)
t
rr
− 30 − ns
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage (I
S
= −1.7 Adc, V
GS
= 0 Vdc) V
SD
− −0.80 −1.5 Vdc
Diode Forward On−Voltage (I
S
= −3.3 Adc, V
GS
= 0 Vdc) V
SD
− −0.90 − Vdc
3. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge are mandatory.
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