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NTR0202PLT1G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-3
描述:
ON SEMICONDUCTOR NTR0202PLT1G 晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
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NTR0202PLT1G数据手册
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NTR0202PL, NVTR0202PL
http://onsemi.com
3
0
0.25
0.5
0.75
0 0.25 0.5 0.75 1.0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics
V
GS
= −10 V
−6 V
−5.5 V
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
T
J
= 25°C
0
0.25
0.5
0.75
1
0 12345
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
V
DS
≥ −10 V
T
J
= 25°C
T
J
= 125°C
T
J
= 40°C
0
0.5
1
1.5
0.125 0.25 0.375 0.5
−I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance versus Drain Current
T
J
= 150°C
T
J
= 25°C
T
J
= 40°C
0
0.25
0.5
0.75
1.0
0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0
−I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
0
0.5
1
1.5
2
2.5
−40 −15 10 35 60 85 110 135
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
I
D
= −0.05 A
V
GS
= −4.5 V
I
D
= −0.2 A
V
GS
= −10 V
0.1
1
10
1000
2 6 10 14 18
100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 25°C
−I
DSS
, LEAKAGE (nA)
150
V
GS
= −4.5 V
V
GS
= −10 V
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