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NTR0202PLT1G 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-3
描述:
ON SEMICONDUCTOR NTR0202PLT1G 晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
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NTR0202PLT1G数据手册
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若手册格式错乱，请下载阅览PDF原文件
NTR0202PL, NVTR0202PL
http://onsemi.com
4
0
20
40
60
80
100
10 5 0 5 10 15 20
−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
rss
C
oss
C
iss
T
J
= 25°C
C, CAPACITANCE (pF)
−V
GS
−V
DS
0
2.5
5
7.5
10
0 0.5 1 1.5 2
Q
G
, TOTAL GATE CHARGE (nC)
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total
Charge
T
J
= 25°C
I
D
= −0.4 A
Q
T
Q
2
Q
1
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
100
1 10 100
10
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V
DD
= −16 V
I
D
= −0.2 A
V
GS
= −4.5 V
t
r
t
d(off)
t
d(on)
t
f
R
G
, GATE RESISTANCE (W)
0
0.25
0.5
0.75
1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−I
S
, SOURCE CURRENT (AMPS)
Figure 10. Diode Forward Voltage versus
Current
V
GS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
rss
C
iss
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