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RE1C002UNTCL 数据手册 - ROHM Semiconductor（罗姆半导体）
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ROHM Semiconductor（罗姆半导体）
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MOS管
封装:
SOT-416
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N 通道 MOSFET 晶体管，ROHM### MOSFET 晶体管，ROHM Semiconductor
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RE1C002UNTCL数据手册
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RE1C002UN
Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
R
thJA
*2
- - 833 ℃/W
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA 20 - - V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
I
D
= 1mA
- 29.0 - mV/℃
ΔT
j
referenced to 25℃
Zero gate voltage
drain current
I
DSS
V
DS
= 20V, V
GS
= 0V - - 1 μA
Gate - Source leakage current
I
GSS
V
GS
= ±8V, V
DS
= 0V - - ±10 μA
Gate threshold voltage
V
GS(th)
V
DS
= 10V, I
D
= 1mA 0.3 - 1.0 V
Gate threshold voltage
temperature coefficient
ΔV
GS(th)
I
D
= 1mA
- -1.6 - mV/℃
ΔT
j
referenced to 25℃
Static drain - source
on - state resistance
R
DS(on)
*3
V
GS
= 2.5V, I
D
= 200mA - 0.8 1.2
Ω
V
GS
= 1.8V, I
D
= 200mA - 1.0 1.4
V
GS
= 1.5V, I
D
= 40mA - 1.2 2.4
V
GS
= 1.2V, I
D
= 20mA - 1.6 4.8
V
GS
= 2.5V, I
D
= 100mA
- 1.2 1.7
T
j
= 125℃
Forward Transfer
Admittance
|Y
fs
|
*3
V
DS
= 10V, I
D
= 200mA
400 - - mS
*1 Pw≦10μs, Duty cycle≦1%
*2 Each terminal mounted on a reference land.
*3 Pulsed
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2/10
20160624 - Rev.001
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