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SSM3J14T(TE85L,F) 数据手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
MOS管
封装:
TSM
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SSM3J14T(TE85L,F)数据手册
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SSM3J14T
2014-03-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±16 V, V
DS
= 0 ⎯ ⎯ ±1 μA
V
(BR) DSS
I
D
= −1 mA, V
GS
= 0 −30 ⎯ ⎯ V
Drain-source breakdown voltage
V
(BR) DSX
I
D
= −1 mA, V
GS
= 20 V −15 ⎯ ⎯ V
Drain cut-off current I
DSS
V
DS
= −30 V, V
GS
= 0 ⎯ ⎯ −1 μA
Gate threshold voltage V
th
V
DS
= −5 V, I
D
= −0.1 mA −0.8 ⎯ −2.0 V
Forward transfer admittance |Y
fs
| V
DS
= −5 V, I
D
= −1.35 A (Note 3) 2.0
⎯
⎯ S
I
D
= −1.35 A, V
GS
= −10 V (Note 3) ⎯ 63 85
I
D
= −1.35 A, V
GS
= −4.5 V (Note 3) ⎯ 106 145
Drain-source on resistance R
DS (ON)
I
D
= −1.35 A, V
GS
= −4.0 V (Note 3) ⎯ 120 170
mΩ
Input capacitance C
iss
V
DS
= −15 V, V
GS
= 0, f = 1 MHz ⎯ 413 ⎯ pF
Reverse transfer capacitance C
rss
V
DS
= −15 V, V
GS
= 0, f = 1 MHz ⎯ 77 ⎯ pF
Output capacitance C
oss
V
DS
= −15 V, V
GS
= 0, f = 1 MHz ⎯ 113 ⎯ pF
Turn-on time t
on
⎯ 29 ⎯
Switching time
Turn-off time t
off
V
DD
= −15 V, I
D
= −1 A
V
GS
= 0 to −4 V, R
G
= 10 Ω
⎯ 29 ⎯
ns
Note 3: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
= −100 μA
for this product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS (off)
requires lower voltage than V
th
.
(relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration for using the device.
t
on
t
off
(b) V
IN
(c) V
OUT
0 V
−4 V
V
DD
V
DS (ON)
t
r
t
f
10%
90%
90%
10%
(a) Test circuit
V
DD
= −10 V
R
G
= 4.7 Ω
D.U.≤ 1%
V
IN
: t
r
, t
f
< 5 ns
Common source
Ta = 25°C
0
−4 V
IN
OUT
V
DD
10 μs
R
G
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