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STM6778TGWB6F 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
电源监控芯片
封装:
SOT-23-6
描述:
STM6778 系列 1.11V, 3.075V 140 ms 双超低电压 监控器 - SOT-23-6
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引脚图在P7P8Hot
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原理图在P9
封装尺寸在P22P23P24P25
型号编码规则在P26P27P28
标记信息在P27P28
封装信息在P25
技术参数、封装参数在P17
应用领域在P10P30
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STM6778TGWB6F数据手册
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STM6717/6718/6719/6720/STM6777/6778/6779/6780 DC and AC parameters
Doc ID 11469 Rev 8 19/30
Table 6. DC and AC characteristics
Sym
Alter-
native
Description Test condition
(1)
Min Typ Max Unit
V
CC
Operating voltage 0.8 5.5 V
I
CC1
V
CC1
supply current
V
CC1
< 5.5 V, all I/O pins open 12 35 µA
V
CC1
< 3.6 V, all I/O pins open 8 23 µA
I
CC2
V
CC2
supply current
V
CC2
< 3.6 V, all I/O pins open 3 9 µA
V
CC2
< 2.75 V, all I/O pins open 2.5 7 µA
I
LI
(2)
Input leakage current 0 V = V
IN
= V
CC
–1 +1 µA
I
LO
Open drain RST output
leakage current
V
CC1
> V
RST1
, V
CC2
> V
RST2
;
RST
not asserted
0.5 µA
V
OL
Output low voltage (RST;
push-pull or open drain)
V
CC1
or V
CC2
≥ 0.8 V,
I
SINK
= 1 µA, RST asserted
0.3 V
V
CC1
or V
CC2
≥ 1.0 V,
I
SINK
= 50 µA, RST asserted
0.3 V
V
CC1
or V
CC2
≥ 1.2 V,
I
SINK
= 100 µA, RST asserted
0.3 V
V
CC1
or V
CC2
≥ 2.7 V,
I
SINK
= 1.2 mA, RST asserted
0.3 V
V
CC1
or V
CC2
≥ 4.5 V,
I
SINK
= 3.2 mA, RST asserted
0.4 V
V
OH
Output high voltage (RST;
push-pull only)
V
CC1
≥ 1.8 V, I
SOURCE
= 200 µA,
RST
not asserted
0.8V
CC1
V
V
CC1
≥ 2.7 V, I
SOURCE
= 500 µA,
RST not asserted
0.8V
CC1
V
V
CC1
≥ 4.5 V, I
SOURCE
= 800 µA,
RST not asserted
0.8V
CC1
V
t
R
(3)
Push-pull RST rise time
(STM6718/20/78/80)
Rise time measured from 10% to
90% of V
CC
;
C
L
= 5 pF, V
CC
= 3.3 V
525ns
Reset thresholds
V
RST
(4)
V
TH1
V
CC1
reset threshold
L (falling) 4.500 4.625 4.750 V
M (falling) 4.250 4.375 4.500 V
T (falling) 3.000 3.075 3.150 V
S (falling) 2.850 2.925 3.000 V
R (falling) 2.550 2.625 2.700 V
Z (falling) 2.250 2.313 2.375 V
Y (falling) 2.125 2.188 2.250 V
W (falling) 1.620 1.665 1.710 V
V (falling) 1.530 1.575 1.620 V
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