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STM6778TGWB6F 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
电源监控芯片
封装:
SOT-23-6
描述:
STM6778 系列 1.11V, 3.075V 140 ms 双超低电压 监控器 - SOT-23-6
Pictures:
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引脚图在P7P8Hot
典型应用电路图在P6
原理图在P9
封装尺寸在P22P23P24P25
型号编码规则在P26P27P28
标记信息在P27P28
封装信息在P25
技术参数、封装参数在P17
应用领域在P10P30
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STM6778TGWB6F数据手册
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STM6717/6718/6719/6720/STM6777/6778/6779/6780 DC and AC parameters
Doc ID 11469 Rev 8 21/30
Manual (push-button) reset input
V
IL
MR input voltage
0.3V
C
C1
V
V
IH
0.7V
CC1
V
t
MLMH
t
MR
MR minimum pulse width
(STM6717/18/19/20)
1µs
MR minimum pulse width
(STM6777/78/79/80)
MRC connected via
capacitor to V
SS
6µs
t
MLRL
t
MRD
MR to RST output delay 200 ns
MR
glitch immunity
(STM6717/18/19/20)
100 ns
MR
pull-up resistance 25 50 80 kΩ
1. Valid for ambient operating temperature: T
A
= –40 to 85 °C; V
CC1
= 0.8 to 5.5 V and V
CC2
= 0.8 to 3.6 V (except where
noted).
2. Input leakage for the MRC pin is not tested.
3. Guaranteed by design.
4. The leakage current measured on the RST
pin is tested with the reset de-asserted (output high impedance).
Table 6. DC and AC characteristics (continued)
Sym
Alter-
native
Description Test condition
(1)
Min Typ Max Unit
Table 7. t
MLMH
minimum pulse width
V
CC1
Capacitor value
(1)
100 pF 0.1 µF 2.2 µF 3.3 µF 4.7 µF 6.8 µF
1.6 V 120 µs 120 ms 2.6 s 4.0 s 5.6 s 8.2 s
2.0 V 122 µs 122 ms 2.7 s 4.0 s 5.8 s 8.3 s
3.0 V 125 µs 125 ms 2.7 s 4.1 s 5.9 s 8.5 s
4.0 V 128 µs 129 ms 2.8 s 4.2 s 6.0 s 8.7 s
5.0 V 130 µs 130 ms 2.8 s 4.3 s 6.1 s 8.8 s
1. At 25 °C (typical)
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