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CSD18531Q5AT 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSON-8
描述:
60V、N 沟道 NexFET MOSFET™、单路、SON5x6、4.6mΩ 8-VSONP -55 to 150
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CSD18531Q5AT数据手册
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V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
D007
T
C
= 25° C, I
D
= 22 A
T
C
= 125° C, I
D
= 22 A
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 5 10 15 20 25 30 35
0
2
4
6
8
10
D004
I
D
= 22 A
V
DS
= 30 V
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
P0093-01
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Design
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD18531Q5A
SLPS321G –JUNE 2012–REVISED AUGUST 2017
CSD18531Q5A 60-V N-Channel NexFET™ Power MOSFET
1
1 Features
1
• Ultra-Low Q
g
and Q
gd
• Low-Thermal Resistance
• Avalanche Rated
• Logic Level
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Battery Motor Control
3 Description
This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
Top View
Product Summary
T
A
= 25°C TYPICAL VALUE UNIT
V
DS
Drain-to-Source Voltage 60 V
Q
g
Gate Charge Total (10 V) 36 nC
Q
gd
Gate Charge Gate-to-Drain 5.9 nC
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 4.5 V 4.4
mΩ
V
GS
= 10 V 3.5
V
GS(th)
Threshold Voltage 1.8 V
Device Information
(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD18531Q5A 2500 13-Inch Reel SON
5.00-mm × 6.00-mm
Plastic Package
Tape
and
Reel
CSD18531Q5AT 250 7-Inch Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
T
A
= 25°C VALUE UNIT
V
DS
Drain-to-Source Voltage 60 V
V
GS
Gate-to-Source Voltage ±20 V
I
D
Continuous Drain Current (Package Limited) 100
A
Continuous Drain Current (Silicon Limited),
T
C
= 25°C
134
Continuous Drain Current
(1)
19
I
DM
Pulsed Drain Current
(2)
400 A
P
D
Power Dissipation
(1)
3.8
W
Power Dissipation, T
C
= 25°C 156
T
J
Operating Junction –55 to 175 °C
T
stg
Storage Temperature –55 to 175 °C
E
AS
Avalanche Energy, Single Pulse
I
D
= 67 A, L = 0.1 mH, R
G
= 25 Ω
224 mJ
(1) Typical R
θJA
= 40°C/W on a 1-in
2
, 2-oz Cu pad on a
0.06-in thick FR4 PCB.
(2) Max R
θJC
= 1°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
R
DS(on)
vs V
GS
Gate Charge
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