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IKW50N65EH5 其他数据使用手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
TO-247-3
描述:
IGBT管/模块 IKW50N65EH5 TO-247-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
应用领域在P9P31
导航目录
IKW50N65EH5数据手册
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若手册格式错乱，请下载阅览PDF原文件
The TRENCHSTOP™ IGBT combines the unique Trench- and Fieldstop-Technology and is a benchmark in the Industry.
The portfolio includes the voltage range from 600 V up to 1700 V with several dierent versions, and is optimized for a
wide range of applications like Drives, Renewable Energy, Welding and Power Supplies.
Emitter Controlled-Diode is Infineon unique Fast Recovery Diode technology. The Ultrathin wafer and field-stop
technology makes the Emitter Controlled-Diode from Infineon ideally suited for consumer & industry applications as
it lower the turn-on losses of the IGBT with so recovery. The Emitter Controlled-Diode is optimized for the Infineon
IGBT technology.
Bare dies
IGBTs and diodes
54
Bare dies
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