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IKW50N65EH5
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IKW50N65EH5数据手册
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Product Product Status V
CE
max
[V]
I
C
max
[A]
V
CE(sat)
max
[V]
V
GE(th)
min
[V]
V
GE(th)
max
[V]
t
r
[ns]
t
f
[ns]
Operating
Temperature min
[°C]
Operating
Temperature max
[°C]
Product Product Status V
CE
max
[V]
I
C
max
[A]
V
CE(sat)
max
[V]
V
GE(th)
min
[V]
V
GE(th)
max
[V]
t
r
[ns]
t
f
[ns]
Operating
Temperature min
[°C]
Operating
Temperature max
[°C]
IGBT bare die (400 V - 1200 V)
IGBT HighSpeed 3
IGC99T120T8RQ coming soon 1200.0 100.0 2.42 5.1 6.4 - - -40.0 175.0
IGC10T65QE active and preferred 650.0 20.0 2.32 4.2 5.6 - - -40.0 175.0
IGC15T65QE active and preferred 650.0 30.0 2.32 4.2 5.6 - - -40.0 175.0
IGC19T65QE active and preferred 650.0 40.0 2.32 4.2 5.6 - - -40.0 175.0
IGC28T65QE active and preferred 650.0 50.0 2.22 4.2 5.6 - - -40.0 175.0
IGC31T65QE active and preferred 650.0 60.0 2.22 4.2 5.6 - - -40.0 175.0
IGC39T65QE active and preferred 650.0 75.0 2.22 4.2 5.6 - - -40.0 175.0
IGC54T65R3QE active and preferred 650.0 100.0 2.22 4.2 5.6 - - -40.0 175.0
IGC18T120T8Q active and preferred 1200.0 15.0 2.42 5.3 6.3 - - -40.0 175.0
IGC27T120T8Q active and preferred 1200.0 25.0 2.42 5.3 6.3 - - -40.0 175.0
IGC41T120T8Q active and preferred 1200.0 40.0 2.42 5.3 6.3 - - -40.0 175.0
IGC50T120T8RQ active and preferred 1200.0 50.0 2.42 5.3 6.3 - - -40.0 175.0
IGC70T120T8RQ active and preferred 1200.0 75.0 2.42 5.3 6.3 - - -40.0 175.0
IGBT3
SIGC03T60E active and preferred 600.0 4.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC04T60E active and preferred 600.0 6.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC04T60GE active and preferred 600.0 6.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC06T60E active and preferred 600.0 10.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC06T60GE active and preferred 600.0 10.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC08T60E active and preferred 600.0 15.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC10T60E active and preferred 600.0 20.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC15T60E active and preferred 600.0 30.0 1.9 5.0 6.5 - - -40.0 175.0
SIGC28T60E active and preferred 600.0 50.0 1.85 5.0 6.5 - - -40.0 175.0
SIGC39T60E active and preferred 600.0 75.0 1.85 5.0 6.5 - - -40.0 175.0
SIGC40T60R3E active and preferred 600.0 75.0 1.85 5.0 6.5 - - -40.0 175.0
SIGC54T60R3E active and preferred 600.0 100.0 1.85 5.0 6.5 - - -40.0 175.0
SIGC76T60R3E active and preferred 600.0 150.0 1.85 5.0 6.5 - - -40.0 175.0
SIGC100T60R3E active and preferred 600.0 200.0 1.85 5.0 6.5 - - -40.0 175.0
SIGC04T65E active and preferred 650.0 6.0 1.87 5.1 6.5 - - -40.0 175.0
SIGC06T65E active and preferred 650.0 10.0 1.87 5.1 6.5 - - -40.0 175.0
SIGC06T65GE active and preferred 650.0 10.0 1.87 5.1 6.4 - - -40.0 175.0
SIGC08T65E active and preferred 650.0 15.0 1.87 5.1 6.4 - - -40.0 175.0
SIGC10T65E active and preferred 650.0 20.0 1.87 5.1 6.4 - - -40.0 175.0
SIGC15T65E active and preferred 650.0 30.0 1.87 5.1 6.4 - - -40.0 175.0
SIGC28T65E active and preferred 650.0 50.0 1.77 5.1 6.4 - - -40.0 175.0
SIGC39T65E active and preferred 650.0 75.0 1.77 5.1 6.4 - - -40.0 175.0
SIGC40T65R3E active and preferred 650.0 75.0 1.77 5.1 6.4 - - -40.0 175.0
SIGC54T65R3E active and preferred 650.0 100.0 1.77 5.1 6.4 - - -40.0 175.0
SIGC76T65R3E active and preferred 650.0 150.0 1.2 5.1 6.4 - - -40.0 175.0
SIGC78T65R3E active and preferred 650.0 150.0 1.54 5.1 6.4 - - -40.0 175.0
SIGC100T65R3E active and preferred 650.0 200.0 1.2 5.1 6.4 - - -40.0 175.0
SIGC12T120E active and preferred 1200.0 8.0 2.1 5.0 6.5 - - -40.0 150.0
6 7
Bare dies
Bare dies

IKW50N65EH5 数据手册

Infineon(英飞凌)
17 页 / 1.92 MByte
Infineon(英飞凌)
270 页 / 11.59 MByte
Infineon(英飞凌)
73 页 / 2.93 MByte
Infineon(英飞凌)
34 页 / 1.14 MByte
Infineon(英飞凌)
2 页 / 0.35 MByte

IKW50N65 数据手册

Infineon(英飞凌)
INFINEON  IKW50N65F5FKSA1  单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
INFINEON  IKW50N65H5FKSA1  单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
INFINEON  IKW50N65H5  单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
INFINEON  IKW50N65F5  单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
IGBT 晶体管 Trenchstop 5 IGBT
Infineon(英飞凌)
单晶体管, IGBT, 80 A, 1.35 V, 274 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
Infineon(英飞凌)
单晶体管, IGBT, 80 A, 1.65 V, 275 W, 650 V, TO-247, 3 引脚
Infineon(英飞凌)
IGBT管/模块 IKW50N65WR5 TO-247-3
Infineon(英飞凌)
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
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