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NTJD4401NT1G 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SC-70-6
描述:
ON SEMICONDUCTOR NTJD4401NT1G 双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
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NTJD4401NT1G数据手册
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Philips Semiconductors
PMGD280UN
Dual N-channel µTrenchMOS™ ultra low level FET
Product data Rev. 01 — 10 February 2004 2 of 12
9397 750 12763
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3. Ordering information
4. Limiting values
[1] Single device conducting.
Table 2: Ordering information
Type number Package
Name Description Version
PMGD280UN SC-88 Plastic surface mounted package; 6 leads SOT363
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 20 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 150 °C; R
GS
=20kΩ -20V
V
GS
gate-source voltage (DC) - ±8V
I
D
drain current (DC) T
sp
=25°C; V
GS
= 4.5 V; Figure 2 and 3
[1]
- 0.87 A
T
sp
= 100 °C; V
GS
= 4.5 V; Figure 2
[1]
- 0.55 A
I
DM
peak drain current T
sp
=25°C; pulsed; t
p
≤ 10 µs; Figure 3
[1]
- 1.75 A
P
tot
total power dissipation T
sp
=25°C; Figure 1 - 0.4 W
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
sp
=25°C
[1]
- 0.34 A
I
SM
peak source (diode forward) current T
sp
=25°C; pulsed; t
p
≤ 10 µs
[1]
- 0.69 A
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