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SI1031X-T1 其他数据使用手册 - VISHAY（威世）
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SI1031X-T1数据手册
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Si1031R/X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71171
S-31507—Rev. B, 14-Jul-03
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ
a
Max Unit
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
-0.40 -1.20 V
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "2.8 V
"0.5 "1
mA
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "4.5 V
"1 "2
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V -1 -500 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85_C
-10
mA
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V -200 mA
V
GS
= -4.5 V, I
D
= -150 mA 8
Drain Source On State Resistance
a
r
DS( )
V
GS
= -2.5 V, I
D
= -125 m A 12
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -1.8 V, I
D
= -100 m A 15
W
V
GS
= -1.5 V, I
D
= -30 m A 20
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -150 mA
0.4 S
Diode Forward Voltage
a
V
SD
I
S
= -150 mA, V
GS
= 0 V -1.2 V
Dynamic
b
Total Gate Charge Q
g
1500
Gate-Source Charge Q
gs
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -150 mA
150
pC
Gate-Drain Charge Q
gd
450
Turn-On Delay Time t
d(on)
55
Rise Time t
r
V
DD
= -10 V, R
L
= 65 W
30
ns
Turn-Off Delay Time t
d(off)
V
DD
= -10 V
,
R
L
= 65 W
I
D
^ -150 mA, V
GEN
= -4.5 V, R
G
= 10 W
60
ns
Fall Time t
f
30
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
0
100
200
300
400
500
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.1
0.2
0.3
0.4
0.5
0123456
V
GS
= 5 thru 2.5 V
T
J
= -55_C
125_C
2 V
25_C
Output Characteristics Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
1.8 V
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