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AFT05MP075GNR1 开发手册 - Avnet
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AFT05MP075GNR1数据手册
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2
RF Device Data
Freescale Semiconductor, Inc.
AFT05MP075NR1 AFT05MP075GNR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +40 Vdc
Gate--Source Voltage V
GS
--6.0, +12 Vdc
Operating Voltage V
DD
17, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 C
Case Operating Temperature Range T
C
–40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
Total Device Dissipation @ T
C
=25C
Derate above 25C
P
D
690
3.45
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 70 W CW, 12.5 Vdc, I
DQ(A+B)
= 400 mA, 520 MHz
R
JC
0.29 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C
Table 5. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=40Vdc,V
GS
=0Vdc)
I
DSS
— — 3 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 12.5 Vdc, V
GS
=0Vdc)
I
DSS
— — 2 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 600 nAdc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 295 Adc)
V
GS(th)
1.7 2.1 2.5 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=3.0Adc)
V
DS(on)
— 0.14 — Vdc
Forward Transconductance
(4)
(V
GS
=10Vdc,I
D
=8Adc)
g
fs
— 7.3 — S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
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