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AFT05MP075GNR1 开发手册 - Avnet
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AFT05MP075GNR1数据手册
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AFT05MP075NR1 AFT05MP075GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
— 2.3 — pF
Output Capacitance
(V
DS
= 12.5 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
oss
— 64 — pF
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
=0Vdc 30 mV(rms)ac @ 1 MHz)
C
iss
— 148 — pF
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 12.5 Vdc, I
DQ(A+B)
= 400 mA, P
in
=1W,f=520MHz
Common--Source Amplifier Output Power
P
out
— 70 — W
Drain Efficiency
D
— 68.5 — %
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) I
DQ(A+B)
= 400 mA
Frequency
(MHz)
Signal
Type
VSWR
P
in
(W) Test Voltage, V
DD
Result
520 CW > 65:1 at all Phase Angles 2
(3 dB Overdrive)
17 No Device Degradation
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
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