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ADS4449EVM 数据手册 - TI（德州仪器）
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TI（德州仪器）
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ADS4449EVM数据手册
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6
ADS4449
SBAS603A –APRIL 2013–REVISED JANUARY 2016
www.ti.com
Product Folder Links: ADS4449
Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated
Recommended Operating Conditions (continued)
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
(1) Prolonged use at this junction temperature may increase the device failure-in-time (FIT) rate.
Input clock amplitude differential
(V
CLKP
– V
CLKM
)
Sine wave, ac-coupled 0.2 1.5
V
PP
LVPECL, ac-coupled 1.6
LVDS, ac-coupled 0.7
LVCMOS, single-ended, ac-coupled 1.8
Input clock duty cycle 40% 50% 60%
DIGITAL OUTPUTS
C
LOAD
Maximum external load capacitance from each output terminal to DRVSS
(default strength)
3.3 pF
R
LOAD
Differential load resistance between the LVDS output pairs (LVDS mode) 100 Ω
TEMPERATURE RANGE
T
A
Operating free-air temperature –40 85 °C
T
J
Operating junction temperature
Recommended 105
°C
Maximum rated
(1)
125
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
ADS4449
UNITZCR (NFBGA)
144 PINS
R
θJA
Junction-to-ambient thermal resistance 35.9 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 5.1 °C/W
R
θJB
Junction-to-board thermal resistance 12.6 °C/W
ψ
JT
Junction-to-top characterization parameter 0.1 °C/W
ψ
JB
Junction-to-board characterization parameter 12.4 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A °C/W
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