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CSD19537Q3 数据手册 - TI（德州仪器）
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TI（德州仪器）
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MOS管
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VSON-Clip-8
描述:
CSD19537Q3，100V N 沟道 NexFET(TM) 功率 MOSFET
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CSD19537Q3数据手册
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CSD19537Q3
SLPS549 –AUGUST 2015
www.ti.com
Table of Contents
6.1 Community Resources.............................................. 7
1 Features.................................................................. 1
6.2 Trademarks............................................................... 7
2 Applications ........................................................... 1
6.3 Electrostatic Discharge Caution................................ 7
3 Description............................................................. 1
6.4 Glossary.................................................................... 7
4 Revision History..................................................... 2
7 Mechanical, Packaging, and Orderable
5 Specifications......................................................... 3
Information............................................................. 8
5.1 Electrical Characteristics........................................... 3
7.1 Q3 Package Dimensions .......................................... 8
5.2 Thermal Information.................................................. 3
7.2 Recommended PCB Pattern..................................... 9
5.3 Typical MOSFET Characteristics.............................. 4
7.3 Recommended Stencil Opening ............................... 9
6 Device and Documentation Support.................... 7
7.4 Q3 Tape and Reel Information................................ 10
4 Revision History
DATE REVISION NOTES
August 2015 * Initial release.
2 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD19537Q3
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