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FDB15N50 数据手册 - Fairchild(飞兆/仙童)
制造商:
Fairchild(飞兆/仙童)
分类:
MOS管
封装:
TO-263-3
描述:
FAIRCHILD SEMICONDUCTOR FDB15N50 晶体管, MOSFET, N沟道, 15 A, 500 V, 0.33 ohm, 10 V, 3.4 V
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FDB15N50数据手册
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November 2013
FDB15N50 — N-Channel UniFET
TM
MOSFET
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
www.fairchildsemi.com
1
FDB15N50
N-Channel UniFET
TM
MOSFET
500 V, 15 A, 380 mΩ
Features
• Low gate charge Q
g
results in simple drive requirement
(Typ. 33 nC)
• Improved Gate, avalanche and high reapplied dv/dt
ruggedness
• Reduced R
DS(on)
( 330mΩ ( Typ.) @ V
GS
= 10 V, I
D
= 7.5 A)
• Reduced Miller capacitance and low Input capacitance
(Typ. C
rss
= 16 pF)
• Improved switching speed with low EMI
• 175
o
C rated junction temperature
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and
DMOS technology. This MOSFET is tailored to reduce
on-state resistance, and to provide better switching
performance and higher avalanche energy strength. This
device family is suitable for switching power converter
applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp
ballasts.
G
S
D
D
2
-PAK
G
S
D
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FDB15N50 Unit
V
DSS
Drain to Source Voltage 500 V
V
GS
Gate to Source Voltage ±30 V
I
D
Drain Current
15 A
11 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Pulsed (Note 1)
60 A
P
D
Power dissipation
Derate above 25
o
C
300
2
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Soldering Temperature for 10 seconds 300 (1.6mm from case)
o
C
R
θJC
Thermal Resistance Junction to Case, Max.
0.50
o
C/W
R
θJA
Thermal Resistance Junction to Ambient, Max. 62
o
C/W
Symbol Parameter
FDB15N50 Unit
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