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FDB15N50 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-263-3
描述:
FAIRCHILD SEMICONDUCTOR FDB15N50 晶体管, MOSFET, N沟道, 15 A, 500 V, 0.33 ohm, 10 V, 3.4 V
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FDB15N50数据手册
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若手册格式错乱，请下载阅览PDF原文件
FDB15N50 — N-Channel UniFET
TM
MOSFET
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
www.fairchildsemi.com
4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Maximum Safe Operating Area
T
C
, CASE TEMPERATURE (
o
C)
Figure 9. Maximum Drain Current vs Case
Temperature
t
AV
, TIME IN AVALANCHE (ms)
Figure 10. Unclamped Inductive Switching
Capability
t
1
, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
Typical Characteristics
0
5
10
15
20
25
30
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
SD
, SOURCE TO DRAIN CURRENT (A)
T
J
= 175
o
C
T
J
= 25
o
C
0.1
1.0
10
100
I
D
, DRAIN CURRENT (A)
1 10 100 1000
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
T
C
= 25
o
C
1ms
DC
10ms
100µs
I
D
, DRAIN CURRENT (A)
0
4
8
12
16
25 50 75 100 125 175
150
1
10
50
0.01 0.1 1 5010
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
J
C
) + T
C
SINGLE PULSE
0.20
0.50
0.10
0.05
0.02
0.01
10
-1
10
-2
Z
θJC
(t), Thermal Response [
o
C/W]
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