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FQT1N60CTF_WS 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-261-4
描述:
FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS 功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
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FQT1N60CTF_WS数据手册
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FQT1N60C N-Channel MOSFET
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. V
GS
= 0 V
2
. I
D
= 250 µ A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. V
GS
= 10 V
2. I
D
= 0.1 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
I
D
, Drain Current [A]
T
C
, Case Temperature [°C]
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
100 ms
1 ms
1 s
DC
10 ms
100 µs
Operation in This Area
is Limited by R
DS( on)
Not es :※
1. T
C
= 25
o
C
2
. T
J
= 150
o
C
3.
Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
N o tes :※
1. Z
θ JC
(t) = 6 0 /W M a x.℃
2. D u ty F actor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ JC
(t), Thermal Response
t
1
, Square W ave Pulse Duration [sec]
t
1
P
DM
t
2
©200
7 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
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