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FQT1N60CTF_WS 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-261-4
描述:
FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS 功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
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FQT1N60CTF_WS数据手册
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若手册格式错乱，请下载阅览PDF原文件
FQT1N60C N-Channel MOSFET
www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forw ard Volta
g
e D rop
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forw ard Volta
g
e D rop
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode R everse C urrent
I
RM
Body D iode R ecovery dv/dt
di/dt
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
D =
G ate Pulse W idth
Gate Pulse Period
--------------------------
©
2007 Fairchild Semiconductor Corporation
FQT1N60C Rev. C0
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